The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2023
Filed:
Jul. 02, 2020
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Vadim Valentinovic Vendt, Munich, DE;
Joost Adriaan Willemen, Munich, DE;
Andre Schmenn, Sachsenkam, DE;
Damian Sojka, Regensburg, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 27/02 (2006.01); H01L 29/861 (2006.01); H01L 29/66 (2006.01); H01L 29/74 (2006.01); H01L 29/732 (2006.01);
U.S. Cl.
CPC ...
H01L 27/067 (2013.01); H01L 27/0262 (2013.01); H01L 29/6609 (2013.01); H01L 29/861 (2013.01); H01L 29/66371 (2013.01); H01L 29/732 (2013.01); H01L 29/7404 (2013.01);
Abstract
A method of forming a semiconductor device includes forming a first vertical protection device comprising a thyristor in a substrate, forming a first lateral trigger element for triggering the first vertical protection device in the substrate, and forming an electrical path in the substrate to electrically couple the first lateral trigger element with the first vertical protection device.