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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11600569 B1

PDFFull Text
Date of Patent:
Mar. 07, 2023

Filed:

Apr. 14, 2021

Integrated circuit device and method of manufacturing the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Su-Hyun Bark, Suwon-si, KR;

Sang-Hoon Ahn, Goyang-si, KR;

Young-Bae Kim, Seoul, KR;

Hyeok-Sang Oh, Suwon-si, KR;

Woo-Jin Lee, Hwaseong-si, KR;

Hoon-Seok Seo, Suwon-si, KR;

Sung-Jin Kang, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

F. Chau & Associates, LLC

Primary Examiner:

Hoa B Trinh

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/532 (2006.01); H01L 29/16 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 29/417 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 23/485 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/31111 (2013.01); H01L 21/7682 (2013.01); H01L 21/7685 (2013.01); H01L 21/76802 (2013.01); H01L 21/76805 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/76846 (2013.01); H01L 21/76849 (2013.01); H01L 21/76856 (2013.01); H01L 21/76858 (2013.01); H01L 21/76864 (2013.01); H01L 21/76877 (2013.01); H01L 21/76886 (2013.01); H01L 21/823431 (2013.01); H01L 23/485 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53204 (2013.01); H01L 23/53266 (2013.01); H01L 23/53295 (2013.01); H01L 27/0886 (2013.01); H01L 29/16 (2013.01); H01L 29/41733 (2013.01); H01L 29/7854 (2013.01); H01L 23/53252 (2013.01); H01L 29/785 (2013.01);
Abstract

An integrated circuit device includes a metal film and a complex capping layer covering a top surface of the metal film. The metal film includes a first metal, and penetrates at least a portion of an insulating film formed over a substrate. The complex capping layer includes a conductive alloy capping layer covering the top surface of the metal film, and an insulating capping layer covering a top surface of the conductive alloy capping layer and a top surface of the insulating film. The conductive alloy capping layer includes a semiconductor element and a second metal different from the first metal. The insulating capping layer includes a third metal.

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