The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2023

Filed:

May. 19, 2021
Applicant:

Rockley Photonics Limited, Altrincham, GB;

Inventors:

Aaron Zilkie, Pasadena, CA (US);

Andrew Rickman, Marlborough, GB;

Damiana Lerose, Pasadena, CA (US);

Assignee:

Rockley Photonics Limited, Altrincham, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/8258 (2006.01); G02B 6/13 (2006.01); G02B 6/136 (2006.01); G02B 6/12 (2006.01); G02B 6/30 (2006.01); G02B 6/42 (2006.01); G02B 6/122 (2006.01); H01L 21/762 (2006.01); G02B 6/132 (2006.01); G02B 6/134 (2006.01); H01S 5/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823821 (2013.01); G02B 6/12 (2013.01); G02B 6/131 (2013.01); G02B 6/136 (2013.01); G02B 6/305 (2013.01); H01L 21/8258 (2013.01); G02B 6/12004 (2013.01); G02B 6/1223 (2013.01); G02B 6/132 (2013.01); G02B 6/1347 (2013.01); G02B 6/42 (2013.01); G02B 2006/121 (2013.01); G02B 2006/12038 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12097 (2013.01); G02B 2006/12147 (2013.01); G02B 2006/12152 (2013.01); G02B 2006/12176 (2013.01); G02B 2006/12178 (2013.01); G02B 2006/12195 (2013.01); H01L 21/7624 (2013.01); H01L 21/76224 (2013.01); H01L 21/76264 (2013.01); H01S 5/021 (2013.01); H01S 5/0216 (2013.01);
Abstract

A method for fabricating an integrated structure, using a fabrication system having a CMOS line and a photonics line, includes the steps of: in the photonics line, fabricating a first photonics component in a silicon wafer; transferring the wafer from the photonics line to the CMOS line; and in the CMOS line, fabricating a CMOS component in the silicon wafer. Additionally, a monolithic integrated structure includes a silicon wafer with a waveguide and a CMOS component formed therein, wherein the waveguide structure includes a ridge extending away from the upper surface of the silicon wafer. A monolithic integrated structure is also provided which has a photonics component and a CMOS component formed therein, the photonics component including a waveguide having a width of 0.5 μm to 13 μm.


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