The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2023
Filed:
May. 31, 2019
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Inventors:
Shunpei Yamazaki, Tokyo, JP;
Tetsuya Kakehata, Kanagawa, JP;
Yuji Egi, Kanagawa, JP;
Yasuhiro Jinbo, Kanagawa, JP;
Yujiro Sakurada, Kanagawa, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 29/51 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); H01L 21/02614 (2013.01); H01L 21/823412 (2013.01); H01L 29/517 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01);
Abstract
A semiconductor device having favorable electrical characteristics is provided. A metal oxide is formed over a substrate by the steps of: introducing a first precursor into a chamber in which the substrate is provided; introducing a first oxidizer after the introduction of the first precursor; introducing a second precursor after the introduction of the first oxidizer; and introducing a second oxidizer after the introduction of the second precursor.