The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2023
Filed:
Jun. 03, 2021
Chongqing Institute of East China Normal University, Chongqing, CN;
Shanghai Langyan Optoelectronics Technology Co., Ltd., Shanghai, CN;
East China Normal University, Shanghai, CN;
Heping Zeng, Chongqing, CN;
Jijun Feng, Chongqing, CN;
Mengyun Hu, Shanghai, CN;
Xiaojun Li, Chongqing, CN;
Qinggui Tan, Chongqing, CN;
Jinman Ge, Chongqing, CN;
Chongqing Institute of East China Normal University, Chongqing, CN;
SHANGHAI LANGYAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Shanghai, CN;
East China Normal University, Shanghai, CN;
Abstract
A silicon nitride phased array chip based on a suspended waveguide structure, which includes a silicon nitride waveguide area and a suspended waveguide area. The silicon nitride waveguide area includes a silicon substrate, a silicon dioxide buffer layer, a silicon dioxide cladding layer and a silicon nitride waveguide-based core layer. The silicon nitride waveguide-based core layer includes an optical splitter unit, a first curved waveguide, a thermo-optic phase shifter and a spot-size converter. The suspended waveguide area includes a second curved waveguide and an array grating antenna.