The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2023

Filed:

Sep. 21, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Ranga Rao Arnepalli, Andhra Pradesh, IN;

Colin Costano Neikirk, Sunnyvale, CA (US);

Yuriy Melnik, San Jose, CA (US);

Suresh Chand Seth, Bhandup West, IN;

Pravin K. Narwankar, Sunnyvale, CA (US);

Sukti Chatterjee, San Jose, CA (US);

Lance A. Scudder, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/02 (2006.01); C23C 16/02 (2006.01); C23C 16/50 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
C23C 16/02 (2013.01); C23C 16/0236 (2013.01); C23C 16/0245 (2013.01); C23C 16/401 (2013.01); C23C 16/45525 (2013.01); C23C 16/45531 (2013.01); C23C 16/45542 (2013.01); C23C 16/50 (2013.01); C23C 16/56 (2013.01);
Abstract

Methods of removing native oxide layers and depositing dielectric layers having a controlled number of active sites on MEMS devices for biological applications are disclosed. In one aspect, a method includes removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands in vapor phase to volatize the native oxide layer and then thermally desorbing or otherwise etching the volatized native oxide layer. In another aspect, a method includes depositing a dielectric layer selected to provide a controlled number of active sites on the surface of the substrate. In yet another aspect, a method includes both removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands and depositing a dielectric layer selected to provide a controlled number of active sites on the surface of the substrate.


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