The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2023

Filed:

Jan. 13, 2022
Applicant:

Navitas Semiconductor Limited, Dublin, IE;

Inventors:

Thomas Ribarich, Laguna Beach, CA (US);

Daniel M. Kinzer, El Segundo, CA (US);

Tao Liu, San Marino, CA (US);

Marco Giandalia, Marina Del Rey, CA (US);

Victor Sinow, Fresno, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/573 (2006.01); G05F 3/26 (2006.01); H02M 3/158 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 3/1584 (2013.01); H02M 1/0061 (2013.01); G05F 1/573 (2013.01); G05F 3/26 (2013.01); G05F 3/262 (2013.01); H02M 1/0058 (2021.05); H02M 3/158 (2013.01); H02M 3/1588 (2013.01);
Abstract

A circuit is disclosed. The circuit includes a current detecting FET, configured to generate a current signal indicative of the value of the current flowing therethrough, an operational transconductance amplifier (OTA) configured to output a current in response to the voltage of the current signal, and a resistor configured to receive the current and to generate a voltage in response to the received current, where the generated voltage is indicative of the value of the current flowing through the current detecting FET. The current detecting FET is configured to become nonconductive in response to the generated voltage indicating that the current flowing through the current detecting FET is greater than a threshold.


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