The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2023
Filed:
Aug. 16, 2018
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Takahiro Koyama, Kanagawa, JP;
Tomoki Ono, Kanagawa, JP;
Assignee:
SONY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/06 (2006.01); H01S 5/042 (2006.01); G01S 7/484 (2006.01); G01S 17/10 (2020.01); H01S 5/0625 (2006.01); G01S 17/931 (2020.01); H01S 5/02212 (2021.01); H01S 5/02216 (2021.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0427 (2013.01); G01S 7/484 (2013.01); G01S 17/10 (2013.01); H01S 5/0428 (2013.01); H01S 5/0601 (2013.01); H01S 5/0615 (2013.01); H01S 5/06253 (2013.01); G01S 17/931 (2020.01); H01S 5/02212 (2013.01); H01S 5/02216 (2013.01); H03K 17/687 (2013.01);
Abstract
A semiconductor laser drive circuit includes: an anode electrode divided into at least one gain region and at least one light absorption region; a cathode electrode shared between the gain region and the light absorption region; and a resistance connected to the anode electrode of the light absorption region.