The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2023

Filed:

May. 03, 2018
Applicant:

Ecole Polytechnique Federale DE Lausanne (Epfl), Lausanne, CH;

Inventors:

Neha Arora, Cambridge, GB;

Mohammad Ibrahim Dar, Cambridge, GB;

Shaik Mohammed Zakeeruddin, Bussigny-Lausanne, CH;

Michael Graetzel, St-Sulpice, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/42 (2006.01); H01L 51/00 (2006.01); H01L 51/50 (2006.01);
U.S. Cl.
CPC ...
H01L 51/424 (2013.01); H01L 51/0003 (2013.01); H01L 51/0083 (2013.01); H01L 51/0084 (2013.01); H01L 51/0089 (2013.01); H01L 51/0091 (2013.01); H01L 51/5056 (2013.01); H01L 2251/308 (2013.01);
Abstract

The invention relates to an optoelectronic and/or photoelectrochemical device including a conductive support layer, n-type semiconductor, a sensitizer or light-absorber layer, a hole transporting layer, a spacer layer and a back contact, wherein the n-type semiconductor is in contact with the sensitizer or light-absorber layer, the sensitizer or light-absorber layer includes a perovskite or metal halide perovskite material, the hole transporting layer is in direct contact with the sensitizer or light-absorber layer and includes an inorganic hole transporting material or inorganic p-type semiconductor, the spacer layer is between the hole transporting layer and the back contact and includes a material being different from the inorganic hole transporting material and the material of the back contact.


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