The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2023

Filed:

Jul. 13, 2016
Applicants:

Crayonano As, Trondheim, NO;

Norwegian University of Science and Technology (Ntnu), Trondheim, NO;

Inventors:

Dasa L. Dheeraj, Trondheim, NO;

Dong Chul Kim, Trondheim, NO;

Bjørn Ove M. Fimland, Trondheim, NO;

Helge Weman, Ecublens, CH;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/105 (2006.01); H01L 33/08 (2010.01); H01L 31/0352 (2006.01); H01L 33/24 (2010.01); H01L 33/06 (2010.01); H01L 33/18 (2010.01); H01L 31/103 (2006.01); H01L 31/18 (2006.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/08 (2013.01); H01L 31/035227 (2013.01); H01L 31/105 (2013.01); H01L 31/1035 (2013.01); H01L 31/184 (2013.01); H01L 31/1852 (2013.01); H01L 33/06 (2013.01); H01L 33/18 (2013.01); H01L 33/24 (2013.01); H01L 33/325 (2013.01);
Abstract

A light emitting diode device comprising: a plurality of nanowires or nanopyramids grown on a graphitic substrate, said nanowires or nanopyramids having a p-n or p-i-n junction, a first electrode in electrical contact with said graphitic substrate; a light reflective layer in contact with the top of at least a portion of said nanowires or nanopyramids, said light reflective layer optionally acting as a second electrode; optionally a second electrode in electrical contact with the top of at least a portion of said nanowires or nanopyramids, said second electrode being essential where said light reflective layer does not act as an electrode; wherein said nanowires or nanopyramids comprise at least one group III-V compound semiconductor; and wherein in use light is emitted from said device in a direction substantially opposite to said light reflective layer.


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