The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2023
Filed:
Aug. 30, 2021
Infineon Technologies Ag, Neubiberg, DE;
Andre Roeth, Dresden, DE;
Henning Feick, Dresden, DE;
Heiko Froehlich, Radebeul, DE;
Thoralf Kautzsch, Dresden, DE;
Olga Khvostikova, Dresden, DE;
Stefano Parascandola, Dresden, DE;
Thomas Popp, Falkenstein/Gfaell, DE;
Maik Stegemann, Freital, DE;
Mirko Vogt, Dresden, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method of generating a germanium structure includes performing an epitaxial depositing process on an assembly of a silicon substrate and an oxide layer, wherein one or more trenches in the oxide layer expose surface portions of the silicon substrate. The epitaxial depositing process includes depositing germanium onto the assembly during a first phase, performing an etch process during a second phase following the first phase in order to remove germanium from the oxide layer, and repeating the first and second phases. A germanium crystal is grown in the trench or trenches. An optical device includes a light-incidence surface formed by a raw textured surface of a germanium structure obtained by an epitaxial depositing process without processing the surface of the germanium structure after the epitaxial process.