The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2023
Filed:
Aug. 03, 2018
Tsinghua University, Beijing, CN;
Feng Xu, Beijing, CN;
Bin Gao, Beijing, CN;
Xinyi Li, Beijing, CN;
Huaqiang Wu, Beijing, CN;
He Qian, Beijing, CN;
TSINGHUA UNIVERSITY, Beijing, CN;
Abstract
A nanowire transistor and a manufacture method thereof are provided. The nanowire transistor includes a semiconductor wire, a semiconductor layer, a source electrode and a drain electrode. The semiconductor wire includes a first semiconductor material and includes a source region, a drain region, and a channel region, along an axial direction of the semiconductor wire, the channel region is between the source region and the drain region; the semiconductor layer includes a second semiconductor material and covers the channel region of the semiconductor wire; the source electrode is in the source region of the semiconductor wire and is in direct contact with the source region of the semiconductor wire, and the drain electrode is in the drain region of the semiconductor wire and is in direct contact with the drain region of the semiconductor wire.