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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11594605 B1

PDFFull Text
Date of Patent:
Feb. 28, 2023

Filed:

Mar. 16, 2021

Method of preparing semiconductor device with crystalline overlayer

Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Te-Yin Chen, Taoyuan, TW;

Assignee:

NANYA TECHNOLOGY CORPORATION, New Taipei, TW;

Attorney:

Muncy, Geissler, Olds & Lowe, P.C.

Primary Examiner:

Scott B Geyer

Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 27/108 (2006.01); H01L 21/762 (2006.01); H01L 21/265 (2006.01); H01L 21/308 (2006.01); H01L 29/40 (2006.01); H01L 21/311 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 21/26513 (2013.01); H01L 21/308 (2013.01); H01L 21/31144 (2013.01); H01L 21/76224 (2013.01); H01L 21/76877 (2013.01); H01L 21/823437 (2013.01); H01L 27/10876 (2013.01); H01L 27/10894 (2013.01); H01L 27/10897 (2013.01); H01L 29/401 (2013.01);
Abstract

The present disclosure provide a method of preparing semiconductor device involving planarization processes. The method includes introducing dopants into the exposed portions of the substrate to form doped portions of the substrate; forming a crystalline overlayer on the doped portions of the substrate, wherein the crystalline overlayer has a conductivity lower than that of the doped portions of the substrate. The crystalline overlayer is formed by an epitaxial growth process, the crystalline overlayer is formed as a saddle shape, and the crystalline overlayer has an excess portion protruding from the substrate.

Find Patent Forward Citations

Chen, Te-Yin. (2023). Method of preparing semiconductor device with crystalline overlayer (U.S. Patent No. 11594605). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11594605

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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