The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2023

Filed:

Oct. 22, 2020
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Akio Nakajun, Osaka, JP;

Shota Yamada, Shiga, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 51/44 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14603 (2013.01); H01L 27/14605 (2013.01); H01L 27/14627 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H01L 27/14665 (2013.01); H01L 51/44 (2013.01); H01L 27/14621 (2013.01);
Abstract

An imaging device including: a semiconductor substrate having a first and second surface opposite to the first surface; a microlens located closer to the first surface than the second surface; a first photoelectric converter located between the first surface and the microlens, where the first photoelectric converter includes a first electrode, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that converts light into electric charges; and a signal detecting section located in the semiconductor substrate, the signal detecting section being configured to output a signal corresponding to the electric charges. The first photoelectric converter is the closest of any photoelectric converter existing between the first surface and the microlens to the first surface, and a focal point of the microlens is located below a lowermost surface of the photoelectric conversion layer and above the signal detecting section.


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