The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2023

Filed:

Aug. 24, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Moto Yabuki, Bunkyo Tokyo, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); G11C 7/18 (2006.01); G11C 8/14 (2006.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 7/18 (2013.01); G11C 8/14 (2013.01); H01L 27/1157 (2013.01); H01L 27/11565 (2013.01);
Abstract

A semiconductor memory device according to an embodiment includes: a stacked body alternately stacking first insulating layers and gate electrode layers in a first direction; first to third semiconductor layers in the stacked body extending in the first direction; first to third charge accumulation layers; and a second insulating layer in the stacked body extending in the first direction, the second insulating layer contacting the first semiconductor layer or the first charge accumulation layer in a plane perpendicular to the first direction. A first distance between two end surfaces of the gate electrode layer monotonically increases in the first direction in a first cross section parallel to the first direction. A second distance between two end surfaces of the gate electrode layer monotonically increases in the first direction, decreases, and then monotonically increases in a second cross section parallel to the first direction different from the first cross section.


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