The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2023

Filed:

Mar. 24, 2020
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Keigo Nishida, Toyama, JP;

Takashi Ozaki, Toyama, JP;

Atsushi Hirano, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02312 (2013.01); C23C 16/45563 (2013.01); H01L 21/0228 (2013.01); H01L 21/67109 (2013.01);
Abstract

There is provided a technique that includes: (a) arranging a plurality of first substrates and a second substrate having a smaller surface area than the first substrates and accommodating the plurality of first substrates and the second substrate in a process chamber; and (b) forming a thin film on each of the plurality of first substrates by supplying a processing gas to a substrate arrangement region in which the plurality of first substrates and the second substrate are arranged, wherein (b) includes: (c) supplying a dilution gas to a first supply region of the substrate arrangement region, or not performing a supply of the dilution gas to the first supply region, and supplying the dilution gas to at least one second supply region of the substrate arrangement region at a flow rate larger than a flow rate of the dilution gas supplied to the first supply region.


Find Patent Forward Citations

Loading…