The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2023

Filed:

Aug. 05, 2021
Applicant:

Tower Semiconductor Ltd., Migdal Haemek, IL;

Inventor:

Amos Fenigstein, Haifa, IL;

Assignee:

Tower Semiconductor Ltd., Migdal Haemek, IL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T 1/24 (2006.01); H01L 27/144 (2006.01);
U.S. Cl.
CPC ...
G01T 1/247 (2013.01); H01L 27/1443 (2013.01);
Abstract

There may be provided a radiation sensor, that may include multiple semiconductor regions that form a sensing PN junction and a draining PN junction that is located below the sensing PN junction; a bias circuit that is configured to (i) bias the sensing PN junction to maintain a sensing PN junction depletion region of a fixed size during a first sensing period and during a second sensing period, and (i) bias the draining PN junction to form a draining PN junction depletion region of a first size during the first sensing period and of a second size during the second sensing period; and an output circuit that is configured to generate a first output signal that represent sensed radiation out of radiation that impinged on the radiation sensor during the first sensing period, and to generate a second output signal that represent sensed radiation out of radiation impinged on the radiation sensor during the second sensing period.


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