The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2023

Filed:

Oct. 01, 2020
Applicant:

Wisconsin Alumni Research Foundation, Madison, WI (US);

Inventors:

Paul Gregory Evans, Madison, WI (US);

Thomas Francis Kuech, Madison, WI (US);

Susan Elizabeth Babcock, Madison, WI (US);

Mohammed Humed Yusuf, Madison, WI (US);

Yajin Chen, Madison, WI (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/02 (2006.01); C30B 29/22 (2006.01); H01L 21/02 (2006.01); C30B 29/32 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
C30B 1/023 (2013.01); C30B 29/22 (2013.01); C30B 29/32 (2013.01); H01L 21/02197 (2013.01); H01L 21/02266 (2013.01); H01L 21/02356 (2013.01); H01L 29/40111 (2019.08); H01L 29/6684 (2013.01);
Abstract

A method for crystallizing an amorphous multicomponent ionic compound comprises applying an external stimulus to a layer of an amorphous multicomponent ionic compound, the layer in contact with an amorphous surface of a deposition substrate at a first interface and optionally, the layer in contact with a crystalline surface at a second interface, wherein the external stimulus induces an amorphous-to-crystalline phase transformation, thereby crystallizing the layer to provide a crystalline multicomponent ionic compound, wherein the external stimulus and the crystallization are carried out at a temperature below the melting temperature of the amorphous multicomponent ionic compound. If the layer is in contact with the crystalline surface at the second interface, the temperature is further selected to achieve crystallization from the crystalline surface via solid phase epitaxial (SPE) growth without nucleation.


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