The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2023
Filed:
Aug. 18, 2017
Applicant:
Tokai Carbon Korea Co., Ltd., Anseong-si, KR;
Inventor:
Joung Il Kim, Seoul, KR;
Assignee:
TOKAI CARBON KOREA CO., LTD., Anseong-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/02 (2006.01); C01B 32/956 (2017.01); C30B 29/36 (2006.01); C23C 16/32 (2006.01);
U.S. Cl.
CPC ...
C01B 32/956 (2017.08); C23C 16/325 (2013.01); C30B 29/36 (2013.01); C01P 2002/70 (2013.01); C01P 2002/74 (2013.01); C01P 2004/84 (2013.01);
Abstract
The present invention relates to an SiC material and an SiC composite material and, more particularly, to an SiC material and an SiC composite material having a diffraction intensity ratio (I) of an X-ray diffraction peak, calculated by formula 1 down below, of less than 1.5. The present invention can provide an SiC material and an SiC composite material which can be etched evenly when exposed to plasma and thereby reduce the occurrence of cracks, holes and so forth. [Formula 1] Diffraction intensity ratio (I)=(peak intensity of plane (200)+peak intensity of plane (220))/peak intensity of plane (111).