The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2023

Filed:

Apr. 16, 2019
Applicant:

Tokuyama Corporation, Yamaguchi, JP;

Inventors:

Kazuhiro Kawaguchi, Yamaguchi, JP;

Masami Fujii, Yamaguchi, JP;

Sho Uchida, Yamaguchi, JP;

Manabu Kondo, Yamaguchi, JP;

Yoshifumi Mito, Yamaguchi, JP;

Nobuaki Yoshimatsu, Yamaguchi, JP;

Assignee:

Tokuyama Corporation, Yamaguchi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B02C 1/04 (2006.01); C01B 33/02 (2006.01); B02C 23/30 (2006.01); B02C 23/10 (2006.01); C30B 15/02 (2006.01);
U.S. Cl.
CPC ...
B02C 1/04 (2013.01); B02C 23/10 (2013.01); B02C 23/30 (2013.01); C01B 33/02 (2013.01); C30B 15/02 (2013.01); C01P 2004/60 (2013.01); C01P 2006/80 (2013.01);
Abstract

A polycrystalline silicon block fracture device includes a fracturing part mechanically fracturing a polycrystalline silicon block material to produce a polycrystalline silicon fragment including a polycrystalline silicon powder having a particle size of 500 to 1000 μm then discharging from a discharging port; a falling movement part continuous with a downstream of the fracturing part allowing said polycrystalline silicon fragment discharged from the discharging port to fall by gravity; a receiver part positioned at downstream of the falling movement part and receives the polycrystalline silicon fragment after falling through the falling movement part; and the falling movement part includes a suction removing part in which at least part of the polycrystalline silicon powder included in the polycrystalline silicon fragment is removed by suctioning to a different direction from falling direction; the suction removing part suctions at a suction rate of 1 to 20 m/min.


Find Patent Forward Citations

Kawaguchi, Kazuhiro. (2023). Method for manufacturing polycrystalline silicon fragment and polycrystalline silicon block fracture device (U.S. Patent No. 11590509). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11590509

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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