The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Mar. 08, 2021
Applicant:

Microsoft Technology Licensing, Llc, Redmond, WA (US);

Inventors:

Minseok Oh, Santa Clara, CA (US);

Satyadev Hulikal Nagaraja, San Jose, CA (US);

Cyrus Soli Bamji, Fremont, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/235 (2006.01); H04N 5/225 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H04N 5/2354 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/14656 (2013.01); H04N 5/2256 (2013.01);
Abstract

Examples are disclosed that relate to the use of an always-depleted photodiode in a ToF depth image sensor. One example provides a method of operating a pixel of a depth image sensor, the method comprising receiving photons in a photocharge generation region of the pixel, the photocharge generation region of the pixel comprising an always-depleted photodiode formed by a doped first region comprising one of p-doping or n-doping and a more lightly-doped second region comprising the other of p-doping or n-doping. The method further comprises, during an integration phase, energizing a clock gate for a pixel tap, thereby directing photocharge generated in the photocharge generation region to an in-pixel storage comprising a capacitor, and in a readout phase, reading charge out from the in-pixel storage.


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