The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Oct. 28, 2020
Applicants:

Seiko Epson Corporation, Tokyo, JP;

Sophia School Corporation, Tokyo, JP;

Inventors:

Hiroaki Jiroku, Suwa, JP;

Katsumi Kishino, Akiruno, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/11 (2021.01); H01S 5/34 (2006.01); H01S 5/042 (2006.01); H01S 5/185 (2021.01); G03B 21/20 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/341 (2013.01); H01S 5/04256 (2019.08); H01S 5/11 (2021.01); H01S 5/185 (2021.01); G03B 21/2033 (2013.01); H01S 5/34333 (2013.01);
Abstract

The light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated structure includes a third semiconductor layer which is connected to an opposite side to the substrate of the second semiconductor layer, and is same in conductivity type as the second semiconductor layer, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the third semiconductor layer is provided with a recessed part, an opening of the recessed part is provided to a surface at an opposite side to the substrate side of the third semiconductor layer, and a diametrical size in a bottom of the recessed part is smaller than a diametrical size in the opening of the recessed part.


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