The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Aug. 13, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sung Chul Lee, Osan-si, KR;
Kwang Seok Kim, Seoul, KR;
Jangeun Lee, Suwon-si, KR;
Ung Hwan Pi, Hwaseong-si, KR;
Abstract
A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.