The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Sep. 18, 2017
Google Llc, Mountain View, CA (US);
Brian James Burkett, Mountain View, CA (US);
Google LLC, Mountain View, CA (US);
Abstract
A method of reducing junction resistance variation for junctions in quantum information processing devices fabricated using two-step deposition processes. In one aspect, a method includes providing a dielectric substrate (), forming a first resist layer () on the dielectric substrate, forming a second resist layer () on the first resist layer, and forming a third resist layer () on the second resist layer. The first resist layer includes a first opening () extending through a thickness of the first resist layer, the second resist layer includes a second opening () aligned over the first opening and extending through a thickness of the second resist layer, and the third resist layer includes a third opening () aligned over the second opening and extending through a thickness of the third resist layer.