The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Jul. 29, 2019
Applicant:
Microsoft Technology Licensing, Llc, Redmond, WA (US);
Inventors:
Pavel Aseev, Delft, NL;
Philippe Caroff-Gaonac'h, Delft, NL;
Assignee:
Microsoft Technology Licensing, LLC, Redmond, WA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 39/24 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 39/2403 (2013.01); H01L 21/02603 (2013.01); H01L 29/0676 (2013.01);
Abstract
There is provided a method for fabricating a device. On a top surface of a substrate, a first layer of a first deposition material is formed. The first layer of the first deposition material is patterned to create a seed pattern of remaining first deposition material. Homoepitaxy is used to grow a second layer of the first deposition material on the seed pattern.
Aseev, Pavel. (2023). Fabrication method for semiconductor nanowires coupled to a superconductor (U.S. Patent No. 11588093). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11588093
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile