The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Nov. 04, 2020
Epistar Corporation, Hsinchu, TW;
Yen-Chun Tseng, Hsinchu, TW;
Kuo-Feng Huang, Hsinchu, TW;
Shih-Chang Lee, Hsinchu, TW;
Ming-Ta Chin, Hsinchu, TW;
Shih-Nan Yen, Hsinchu, TW;
Cheng-Hsing Chiang, Hsinchu, TW;
Chia-Hung Lin, Hsinchu, TW;
Cheng-Long Yeh, Hsinchu, TW;
Yi-Ching Lee, Hsinchu, TW;
Jui-Che Sung, Hsinchu, TW;
Shih-Hao Cheng, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.