The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Apr. 22, 2020
Applicant:
Industry-university Cooperation Foundation Hanyang University, Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/02595 (2013.01); H01L 21/823412 (2013.01); H01L 21/823487 (2013.01); H01L 29/04 (2013.01); H01L 29/1037 (2013.01); H01L 29/6675 (2013.01); H01L 29/66742 (2013.01);
Abstract
A thin film transistor and a non-volatile memory device are provided. The thin film transistor comprises a gate electrode, and a metal oxide channel layer traversing the upper or lower portions of the gate electrode. The metal oxide channel layer has semiconductor properties while having bixbyite crystals. An insulating layer is disposed between the gate electrode and the metal oxide channel layer. Source and drain electrodes are electrically connected to both ends of the metal oxide channel layer, respectively.