The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Sep. 25, 2018
Ordos Yuansheng Optoelectronics Co., Ltd., Inner Mongolia, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Wei Liu, Beijing, CN;
Yongbo Ju, Beijing, CN;
Xikang Jin, Beijing, CN;
Zhimin Wang, Beijing, CN;
Jianbin Gao, Beijing, CN;
Xiaoguang Chen, Beijing, CN;
Xinbo Zhou, Beijing, CN;
Jianjun Chen, Beijing, CN;
ORDOS YUANGSHENG OPTOELECTRONICS CO., LTD., Inner Mongolia, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
The present disclosure provides a thin-film transistor and a method for manufacturing the same, an array substrate, and a display device. The thin film transistor of the present disclosure include a plurality of insulating layers, among which at least one insulating layer on the low temperature polysilicon layer comprises organic material, so vias could be formed in the organic material by an exposing and developing process, thereby effectively avoiding the over-etching problem of the low temperature polycrystalline silicon layer caused by dry etching process. By adopting the method for manufacturing the film transistors of the present disclosure, the contact area and uniformity of the drain electrode and the low temperature polysilicon material layer can be increased; the conductivity can be improved; and the production cycle of products can be greatly reduced and thereby improving the equipment capacity.