The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Jul. 26, 2019
Applicant:
Csmc Technologies Fab2 Co., Ltd., Jiangsu, CN;
Inventor:
Huajun Jin, Wuxi, CN;
Assignee:
CSMC TECHNOLOGIES FAB2 CO., LTD., Jiangsu, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/0653 (2013.01); H01L 29/407 (2013.01); H01L 29/66681 (2013.01);
Abstract
A semiconductor device and method for manufacturing same. The semiconductor device comprises: a drift region (); an isolation structure () contacting the drift region (), the isolation structure () comprising a first isolation layer (), a hole etch stop layer () on the first isolation layer (), and a second isolation layer () on the hole etch stop layer (); and a hole field plate () provided above the hole etch stop layer () and contacting the hole etch stop layer ().