The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Dec. 30, 2020
Mqsemi Ag, Zug, CH;
Munaf Rahimo, Gaensbrunnen, CH;
MQSEMI AG, Zug, CH;
Abstract
A MOS cell based on a simple and self-aligned process is provides a planar cell forming a horizontal MOS channel, and a plurality of trench regions, which are arranged at an angle with respect to the longitudinal direction of the planar cells. The new cell concept can adopt both planar MOS channels and Trench MOS channels in a single MOS cell structure, or planar MOS channels alone, while utilising the trenches to improve the current spreading of the planar MOS channels. Floating P-doped regions at the bottom of the trench regions protect the device against high peak electric fields. The orthogonal trench recesses are discontinued in their longitudinal direction to allow the planar channels to conduct electrons. The design can be applied to both IGBTs and MOSFETs based on silicon or wide bandgap materials.