The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Dec. 22, 2020
Applicant:
Denso Corporation, Kariya, JP;
Inventors:
Shunsuke Harada, Kariya, JP;
Takashi Nomura, Kariya, JP;
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66992 (2013.01); H01L 27/0255 (2013.01); H01L 27/0676 (2013.01); H01L 28/40 (2013.01); H01L 29/7804 (2013.01); H01L 29/8611 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate, an insulating film disposed above the semiconductor substrate, a temperature detecting element disposed on the insulating film, and an anode side region and a cathode side region respectively located on an anode side and a cathode side of the temperature detecting element. The anode side region or the cathode side region includes one or more capacitance elements, and a sum of capacitance values of the capacitance elements is larger than a capacitance value of the temperature detecting element.