The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Dec. 22, 2020
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

InTak Cho, Paju-si, KR;

Jiyong Noh, Paju-si, KR;

Jaeman Jang, Paju-si, KR;

PilSang Yun, Paju-si, KR;

Jeyong Jeon, Paju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/32 (2016.01); H01L 29/40 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 21/765 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/402 (2013.01); G09G 3/32 (2013.01); H01L 21/02565 (2013.01); H01L 21/765 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); G09G 2300/0408 (2013.01); G09G 2300/08 (2013.01); G09G 2310/0267 (2013.01); G09G 2310/0286 (2013.01);
Abstract

A thin film transistor, a display panel comprising the same and a display apparatus are discussed. The thin film transistor comprises a buffer layer embodied on a substrate, a semiconductor layer embodied on the buffer layer, including a channel area, a first conductor portion and a second conductor portion, a gate insulating film embodied on the semiconductor layer, a gate electrode embodied on the gate insulating film, and an auxiliary electrode overlapped with the second conductor portion, wherein the first conductor portion is extended from one side of the channel area, and becomes a source area, and the second conductor portion is extended from the other side of the channel area, and becomes a drain area.


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