The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Mar. 09, 2021
Applicant:

L3 Cincinnati Electronics Corporation, Mason, OH (US);

Inventors:

Steven Allen, Maineville, OH (US);

Michael Garter, Lebanon, OH (US);

Robert Jones, Cincinnati, OH (US);

Joseph Meiners, Cincinnati, OH (US);

Yajun Wei, Saratoga, CA (US);

Darrel Endres, West Chester, OH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1469 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 27/1462 (2013.01); H01L 27/1465 (2013.01); H01L 27/14634 (2013.01); H01L 27/14652 (2013.01); H01L 27/14685 (2013.01); H01L 27/14687 (2013.01); H01L 27/14694 (2013.01); H01L 27/14696 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80013 (2013.01); H01L 2224/80894 (2013.01);
Abstract

A direct bonding method for infrared focal plane arrays, includes steps of depositing a thin adhesion layer on infrared radiation detecting material, removing a portion of the thin adhesion layer with a chemical-mechanical polishing process, forming a bonding layer at a bonding interface, and bonding the infrared radiation detecting material to a silicon wafer with the thin adhesion layer as a bonding layer. The thin adhesion layer may include SiO, where x ranges between 1.0 and 2.0. The thickness of the thin adhesion layer to form the bonding layer is 500 angstrom or less.


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