The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Oct. 26, 2018
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Masashi Ohura, Tokyo, JP;

Shin Iwabuchi, Kanagawa, JP;

Atsushi Okuyama, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/30 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 27/307 (2013.01);
Abstract

The present technology relates to a solid-state imaging device capable of suppressing deterioration in dark characteristics, and an electronic apparatus. The device includes a photoelectric conversion section; a trench between the photoelectric conversion sections in adjacent pixels; and a PN junction region on a sidewall of the trench and including a P-type region and an N-type region, the P-type region having a protruding region. The device can include an inorganic photoelectric conversion section having a pn junction and an organic photoelectric conversion section having an organic photoelectric conversion film that are stacked in a depth direction within a same pixel; and a PN junction region on a sidewall of the inorganic photoelectric conversion section. The PN junction region can further include a first P-type region and an N-type region; and a second P-type region. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.


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