The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Jan. 07, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Joongwon Shin, Suwon-si, KR;
Yeonjin Lee, Suwon-si, KR;
Inyoung Lee, Yongin-si, KR;
Jimin Choi, Seoul, KR;
Jung-Hoon Han, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Disclosed is a semiconductor device comprising a semiconductor substrate, a conductive pad on a first surface of the semiconductor substrate, a passivation layer on the first surface of the semiconductor substrate, the passivation layer having a first opening that exposes the conductive pad, an organic dielectric layer on the passivation layer, the organic dielectric layer having a second opening, and a bump structure on the conductive pad and in the first and second openings. The organic dielectric layer includes a material different from a material of the passivation layer. The second opening is spatially connected to the first opening and exposes a portion of the passivation layer. The bump structure includes a pillar pattern in contact with the passivation layer and the organic dielectric layer.