The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Sep. 23, 2020
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Hideki Horita, Toyama, JP;

Ryota Horiike, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/52 (2006.01); C23C 16/24 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02645 (2013.01); C23C 16/24 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01); H01L 21/02532 (2013.01); H01L 21/02667 (2013.01);
Abstract

There is provided a technique that includes: (a) forming a silicon seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a1) supplying a first gas containing halogen and silicon to the substrate; and (a2) supplying a second gas containing hydrogen to the substrate; and (b) forming a film containing silicon on the silicon seed layer by supplying a third gas containing silicon to the substrate, wherein a pressure of a space in which the substrate is located in (a2) is set higher than a pressure of the space in which the substrate is located in (a1).


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