The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Jul. 26, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Youngdo Um, Hwaseong-si, KR;

Younghoon Son, Yongin-si, KR;

Youngdon Choi, Seoul, KR;

Jindo Byun, Suwon-si, KR;

Hyunyoon Cho, Uiwang-si, KR;

Junghwan Choi, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/00 (2006.01); G11C 7/10 (2006.01); H04L 25/49 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1048 (2013.01); H04L 25/4917 (2013.01); G11C 2207/2254 (2013.01);
Abstract

A memory device includes a memory cell array and a transmitter, wherein the transmitter includes a pulse amplitude modulation (PAM) encoder configured to generate a PAM-n first input signal (where n is an integer greater than or equal to 4) from data read from the memory cell array; a pre-driver configured to generate a second input signal based on the first input signal and based on a calibration code signal, and output the second input signal using a first power voltage; and a driver configured to output a PAM-n DQ signal using a second power voltage lower than the first power voltage in response to the second input signal.


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