The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Jun. 10, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Teodor Krassimirov Todorov, Yorktown Heights, NY (US);

Jianshi Tang, Elmsford, NY (US);

Douglas M. Bishop, New York, NY (US);

John Rozen, Hastings on Hudson, NY (US);

Takashi Ando, Tuckahoe, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/28 (2006.01); G06N 3/063 (2023.01); G06N 3/08 (2023.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G06N 3/0635 (2013.01); G06N 3/08 (2013.01); H01L 27/285 (2013.01); H01L 45/1206 (2013.01); H01L 45/1608 (2013.01); H01L 2924/13074 (2013.01);
Abstract

A method of fabricating a neuromorphic device includes forming a variable-resistance layer between a first terminal and a second terminal, the variable-resistance layer varies in resistance based on an oxygen concentration in the variable-resistance layer. The method further includes forming an electrolyte layer over the variable-resistance layer that is stable at room temperature and that conducts oxygen ions in accordance with an applied voltage. The method further includes forming a gate layer over the electrolyte layer to apply a voltage on the electrolyte layer and the variable-resistance layer, the gate layer formed using an oxygen scavenging material.


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