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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11585874 B1

PDFFull Text
Date of Patent:
Feb. 21, 2023

Filed:

Apr. 22, 2020

Magnetic tunnel junction device

Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Johan Swerts, Leuven, BE;

Kevin Garello, Leuven, BE;

Assignee:

IMEC vzw, Leuven, BE;

Attorney:

Knobbe, Martens, Olson & Bear, LLP

Primary Examiner:

Shih Tsun A Chou

Int. Cl.
CPC ...
G01R 33/09 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
G01R 33/098 (2013.01); G11C 11/161 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

The disclosed technology relates generally to semiconductor devices and more particularly to magnetic tunnel junction devices. According to an aspect, an MTJ device comprises a spin-orbit-torque (SOT)-layer. The MTJ device additionally comprises a first free layer, a second free layer, a reference layer and a tunnel barrier layer arranged between the second free layer and the reference layer. The MTJ device further comprises a spacer layer arranged as an interfacial layer between the first free layer and the second free layer. The SOT-layer is adapted to switch a magnetization direction of the first free layer through SOT. The first free layer is adapted to generate a magnetic stray field acting on the second free layer such that a magnetization direction of the second free layer is responsive to a magnetization direction of the first free layer. According to another aspect, a circuit comprises the MTJ device.

Find Patent Forward Citations

Swerts, Johan. (2023). Magnetic tunnel junction device (U.S. Patent No. 11585874). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11585874

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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