The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Oct. 11, 2018
Applicant:

Posco, Pohang-si, KR;

Inventors:

Yu-Mi Ha, Gwangyang-si, KR;

Young-Deok Jung, Gwangyang-si, KR;

Sang-Deok Kang, Gwangyang-si, KR;

Un-Hae Lee, Gwangyang-si, KR;

Yong-Jin Kim, Gwangyang-si, KR;

Sung-Kyu Kim, Gwangyang-si, KR;

Young-Ju Kim, Pohang-si, KR;

Assignee:

POSCO CO., LTD, Pohang-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C22C 38/38 (2006.01); C22C 38/32 (2006.01); C22C 38/28 (2006.01); C22C 38/20 (2006.01); C22C 38/06 (2006.01); C22C 38/02 (2006.01); C22C 38/00 (2006.01); C21D 6/00 (2006.01); C21D 8/00 (2006.01); C21D 7/13 (2006.01); C21D 8/02 (2006.01); C21D 9/00 (2006.01); C21D 9/46 (2006.01); C22C 38/14 (2006.01); C22C 38/16 (2006.01); C22C 38/04 (2006.01); C22C 38/18 (2006.01);
U.S. Cl.
CPC ...
C21D 8/005 (2013.01); C21D 6/002 (2013.01); C21D 6/005 (2013.01); C21D 6/008 (2013.01); C21D 7/13 (2013.01); C21D 8/02 (2013.01); C21D 8/021 (2013.01); C21D 8/0205 (2013.01); C21D 8/0226 (2013.01); C21D 8/0263 (2013.01); C21D 9/00 (2013.01); C21D 9/0081 (2013.01); C21D 9/46 (2013.01); C22C 38/00 (2013.01); C22C 38/001 (2013.01); C22C 38/002 (2013.01); C22C 38/02 (2013.01); C22C 38/04 (2013.01); C22C 38/06 (2013.01); C22C 38/14 (2013.01); C22C 38/16 (2013.01); C22C 38/18 (2013.01); C22C 38/20 (2013.01); C22C 38/28 (2013.01); C22C 38/32 (2013.01); C22C 38/38 (2013.01); C21D 2211/001 (2013.01); Y10T 428/12951 (2015.01); Y10T 428/12972 (2015.01); Y10T 428/12979 (2015.01); Y10T 428/26 (2015.01);
Abstract

The present invention relates to a high manganese steel for low temperature applications and a method for manufacturing the same. The high manganese steel contains 0.3 wt % to 0.8 wt % of C, 18 wt % to 26 wt % of Mn, 0.01 wt % to 1 wt % of Si, 0.01 wt % to 0.5 wt % of Al, 0.1 wt % or less of Ti (excluding 0%), 1 wt % to 4.5 wt % of Cr, 0.1 wt % to 0.9 wt % of Cu, 0.03 wt % or less of S (excluding 0%), 0.3 wt % or less of P (excluding 0%), 0.001 wt % to 0.03 wt % of N, 0.004 wt % or less of B (excluding 0%), and a remainder of Fe and other inevitable impurities, wherein a microstructure comprises an austenite single phase structure, and an average grain size of the austenite is 50 μm or less.


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