The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Jan. 19, 2021
Applicant:

Ii-vi Delaware, Inc, Wilmington, DE (US);

Inventors:

Jon Coppola, Wilmington, DE (US);

Nicholas Coombs, Wilmington, DE (US);

Jiwen Wang, Wilmington, DE (US);

Michael K. Aghajanian, Wilmington, DE (US);

Assignee:

II-VI DELAWARE, INC., Wilmington, DE (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C04B 35/565 (2006.01); C04B 41/45 (2006.01); C04B 35/563 (2006.01); C04B 41/50 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
C04B 35/565 (2013.01); C04B 35/563 (2013.01); C04B 41/4523 (2013.01); C04B 41/4584 (2013.01); C04B 41/5096 (2013.01); H01L 21/687 (2013.01); C04B 2235/427 (2013.01); C04B 2235/428 (2013.01);
Abstract

A reaction-bonded silicon carbide (SiC) body is produced by: providing a preform including ceramic elements and carbon, and one or more surface features; providing a powder which includes diamond particles and carbon; locating the powder in the surface feature(s); and infiltrating the preform and the powder with molten silicon (Si) to form reaction-bonded SiC in the preform, and to form reaction-bonded SiC coatings on the diamond particles. The present disclosure also relates to a device/component which includes: a main body portion and discrete elements located at least partially within the main body portion. The main body portion may include reaction-bonded SiC and Si, but not diamond, while the discrete elements include diamond particles, reaction-bonded SiC coatings surrounding the diamond particles, and Si. According to the present disclosure, diamond may be advantageously located only where it is needed.


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