The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Nov. 14, 2019
Applicant:

Bfly Operations, Inc., Burlington, MA (US);

Inventors:

Lingyun Miao, Fremont, CA (US);

Jianwei Liu, Fremont, CA (US);

Keith G. Fife, Palo Alto, CA (US);

Assignee:

BFLY OPERATIONS, INC., Burlington, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B06B 1/00 (2006.01); B06B 1/02 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B06B 1/0292 (2013.01); B81B 3/0021 (2013.01); B81C 1/00158 (2013.01); B81B 2201/0271 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0315 (2013.01); B81B 2203/04 (2013.01); B81C 2201/013 (2013.01); B81C 2201/0125 (2013.01); B81C 2201/0176 (2013.01); B81C 2203/03 (2013.01);
Abstract

A method of forming an ultrasonic transducer device includes forming and patterning a film stack over a substrate, the film stack comprising a metal electrode layer and a chemical mechanical polishing (CMP) stop layer formed over the metal electrode layer; forming an insulation layer over the patterned film stack; planarizing the insulation layer to the CMP stop layer; measuring a remaining thickness of the CMP stop layer; and forming a membrane support layer over the patterned film stack, wherein the membrane support layer is formed at thickness dependent upon the measured remaining thickness of the CMP stop layer, such that a combined thickness of the CMP stop layer and the membrane support layer corresponds to a desired transducer cavity depth.


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