The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2023

Filed:

May. 17, 2018
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Bernhard Stojetz, Wiesent, DE;

Christoph Eichler, Donaustauf, DE;

Alfred Lell, Maxhütte-Haidhof, DE;

Sven Gerhard, Alteglofsheim, DE;

Assignee:

OSRAM OLED GMBH, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/0941 (2006.01); H01S 5/04 (2006.01); H01S 3/063 (2006.01); H01S 5/026 (2006.01); H01S 5/028 (2006.01); H01S 5/10 (2021.01); H01S 5/042 (2006.01); H01L 33/00 (2010.01); H01S 3/16 (2006.01); H01S 5/02 (2006.01); H01S 5/22 (2006.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01); H01S 5/0234 (2021.01);
U.S. Cl.
CPC ...
H01S 5/041 (2013.01); H01S 3/0632 (2013.01); H01S 3/09415 (2013.01); H01S 5/026 (2013.01); H01S 5/0287 (2013.01); H01S 5/1021 (2013.01); H01L 33/0045 (2013.01); H01S 3/1608 (2013.01); H01S 3/1611 (2013.01); H01S 3/1618 (2013.01); H01S 3/1623 (2013.01); H01S 3/1625 (2013.01); H01S 3/1636 (2013.01); H01S 3/1643 (2013.01); H01S 3/1673 (2013.01); H01S 5/0217 (2013.01); H01S 5/0234 (2021.01); H01S 5/04257 (2019.08); H01S 5/22 (2013.01); H01S 5/343 (2013.01); H01S 5/3412 (2013.01); H01S 2301/176 (2013.01);
Abstract

A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a first resonator and a second resonator, the first and second resonators having parallel resonator directions along a longitudinal direction and being monolithically integrated into the semiconductor laser diode, wherein the first resonator includes at least a part of a semiconductor layer sequence having an active layer and an active region configured to be electrically pumped to generate a first light, wherein the longitudinal direction is parallel to a main extension plane of the active layer, and wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light to produce a second light which is partially emitted outwards from the second resonator.


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