The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2023
Filed:
Jun. 14, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
The Trustees of the University of Pennsylvania, Philadelphia, PA (US);
Tae Gon Kim, Hwaseong-si, KR;
Tianshuo Zhao, Philadelphia, PA (US);
Nuri Oh, Philadelphia, PA (US);
Cherie Kagan, Philadelphia, PA (US);
Eun Joo Jang, Suwon-si, KR;
Christopher Murray, Philadelphia, PA (US);
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do, KR;
THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA, Philadelphia, PA (US);
Abstract
An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.