The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2023

Filed:

Mar. 16, 2021
Applicant:

Microjet Technology Co., Ltd., Hsinchu, TW;

Inventors:

Hao-Jan Mou, Hsinchu, TW;

Hsien-Chung Tai, Hsinchu, TW;

Lin-Huei Fang, Hsinchu, TW;

Yung-Lung Han, Hsinchu, TW;

Chi-Feng Huang, Hsinchu, TW;

Chin-Wen Hsieh, Hsinchu, TW;

Tsung-I Lin, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/23 (2013.01); H01L 41/314 (2013.01); B81C 1/00 (2006.01); H01L 41/09 (2006.01); F16K 99/00 (2006.01); B81B 3/00 (2006.01); F04B 43/04 (2006.01); H01L 41/332 (2013.01);
U.S. Cl.
CPC ...
H01L 41/23 (2013.01); B81B 3/0021 (2013.01); B81C 1/00158 (2013.01); B81C 1/00531 (2013.01); B81C 1/00539 (2013.01); F04B 43/046 (2013.01); F16K 99/0048 (2013.01); H01L 41/0973 (2013.01); H01L 41/314 (2013.01); H01L 41/332 (2013.01); B81B 2201/032 (2013.01); B81B 2201/054 (2013.01); B81B 2201/058 (2013.01); B81B 2203/053 (2013.01); F16K 2099/0074 (2013.01);
Abstract

A manufacturing method of micro fluid actuator includes: providing a substrate; depositing a first protection layer on a first surface of the substrate; depositing an actuation region on the first protection layer; applying lithography dry etching to a portion of the first protection layer to produce at least one first protection layer flow channel; applying wet etching to a portion of a main structure of the substrate to produce a chamber body and a first polycrystalline silicon flow channel region, while a region of an oxidation layer middle section of the main structure is not etched; applying reactive-ion etching to a portion of a second surface of the substrate to produce at least one substrate silicon flow channel; and applying dry etching to a portion of a silicon dioxide layer to produce at least one silicon dioxide flow channel.


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