The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2023
Filed:
Jun. 08, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Ju-Youn Kim, Suwon-si, KR;
Hyung-Soon Jang, Hwaseong-si, KR;
Jong-Mil Youn, Yongin-si, KR;
Tae-Won Ha, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/06 (2006.01); H01L 29/161 (2006.01); H01L 29/20 (2006.01); H01L 29/165 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 21/823871 (2013.01); H01L 27/0207 (2013.01); H01L 27/092 (2013.01); H01L 27/0922 (2013.01); H01L 27/0924 (2013.01); H01L 29/0642 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/20 (2013.01); H01L 29/42364 (2013.01); H01L 29/42372 (2013.01); H01L 29/42376 (2013.01); H01L 29/495 (2013.01); H01L 29/4966 (2013.01); H01L 29/4983 (2013.01); H01L 29/51 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01);
Abstract
A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.