The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2023
Filed:
Sep. 05, 2019
Applicant:
The University of Texas AT Austin, Austin, TX (US);
Inventor:
Qin Huang, Austin, TX (US);
Assignee:
Board of Regents, The University of Texas System, Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 29/1608 (2013.01); H01L 29/404 (2013.01); H01L 29/7833 (2013.01); H01L 29/872 (2013.01);
Abstract
A method and apparatus include an n-doped layer having a first applied charge, and a p-doped layer having a second applied charge. The p-doped layer may be positioned below the n-doped layer. A p-doped buffer layer may have a third applied charge and be positioned below the p-doped layer. The respective charges at each layer may be determined based on a dopant level and a physical dimension of the layer. In one example, the n-doped layer, the p-doped layer, and the p-doped buffer layer comprise a lateral semiconductor manufactured from silicon carbide (SiC).