The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2023
Filed:
Jul. 08, 2021
Applicant:
Stmicroelectronics (Rousset) Sas, Rousset, FR;
Inventor:
Pascal Fornara, Pourrieres, FR;
Assignee:
STMicroelectronics (Rousset) SAS, Rousset, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/868 (2006.01);
U.S. Cl.
CPC ...
H01L 29/04 (2013.01); H01L 29/6609 (2013.01); H01L 29/868 (2013.01); H01L 29/8615 (2013.01);
Abstract
A diode is formed by a polycrystalline silicon bar which includes a first doped region with a first conductivity type, a second doped region with a second conductivity type and an intrinsic region between the first and second doped regions. A conductive layer extends parallel to the polycrystalline silicon bar and separated from the polycrystalline silicon bar by a dielectric layer. The conductive layer is configured to be biased by a bias voltage.