The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2023
Filed:
Sep. 10, 2021
Applicant:
Sony Group Corporation, Tokyo, JP;
Inventor:
Takekazu Shinohara, Kumamoto, JP;
Assignee:
SONY GROUP CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/335 (2011.01); H01L 27/00 (2006.01); H01L 27/146 (2006.01); H04N 5/374 (2011.01);
U.S. Cl.
CPC ...
H01L 27/1464 (2013.01); H01L 27/1463 (2013.01); H01L 27/14605 (2013.01); H01L 27/14623 (2013.01); H01L 27/14636 (2013.01); H01L 27/14641 (2013.01); H01L 27/14643 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01); H04N 5/374 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01);
Abstract
A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.