The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2023

Filed:

Dec. 15, 2020
Applicant:

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventor:

Francois Roy, Seyssin, FR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 5/3745 (2011.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14609 (2013.01); H01L 27/1463 (2013.01); H01L 27/14643 (2013.01); H04N 5/37452 (2013.01);
Abstract

An image sensor includes a pixel with a photosensitive region accommodated within a semiconductor substrate and a MOS capacitive element with a conducting electrode electrically isolated by a dielectric layer. The dielectric layer forms an interface with both the photosensitive region and the semiconductor substrate, the interface of the dielectric layer including charge traps. A control circuit biases the electrode of the MOS capacitive element with a charge pumping signal designed to generate an alternation of successive inversion regimes and accumulation regimes in the photosensitive region. The charge pumping signal produces recombinations of photogenerated charges in the charge traps of the interface of the dielectric layer and the generation of a substrate current to empty recombined photogenerated charges.


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